摘要：Three-dimensional topological insulators are characterized by insulating bulk state and metallic surface state involving relativistic Dirac fermions which are responsible for exotic quantum phenomena and potential applications in spintronics and quantum computations. It is essential to understand how the Dirac fermions interact with other electrons, phonons and disorders. Here we report super-high resolution angle-resolved photoemission studies on the Dirac fermion dynamics in the prototypical Bi2(Te,Se)3 topological insulators. We have directly revealed signatures of the electron-phonon coupling and found that the electron-disorder interaction dominates the scattering process. The Dirac fermion dynamics in Bi2(Te3− x Se x ) topological insulators can be tuned by varying the composition, x, or by controlling the charge carriers. Our findings provide crucial information in understanding and engineering the electron dynamics of the Dirac fermions for fundamental studies and potential applications.
