摘要：Recently, “application of electric field ( E -field)” has received considerable attention as a new method to induce novel quantum phenomena since application of E -field can tune the electronic states directly with obvious scientific and industrial advantages over other turning methods. However, E -field-induced Mott transitions are rare and typically require high E -field and low temperature. Here we report that the multiband Mott insulator Ca2RuO4 shows unique insulator-metal switching induced by applying a dry-battery level voltage at room temperature. The threshold field E th ~40 V/cm is much weaker than the Mott gap energy. Moreover, the switching is accompanied by a bulk structural transition. Perhaps the most peculiar of the present findings is that the induced metal can be maintained to low temperature by a weak current.
