摘要：The road to the realization of complex integrated circuits based on graphene remains an open issue so far. Current graphene based integrated circuits are limited by low integration depth and significant doping variations, representing major road blocks for the success of graphene in future electronic devices. Here we report on the realization of graphene based integrated inverters and ring oscillators. By using an optimized process technology for high-performance graphene transistors with local back-gate electrodes we demonstrate that complex graphene based integrated circuits can be manufactured reproducibly, circumventing problems associated with doping variations. The fabrication process developed here is scalable and fully compatible with conventional silicon technology. Therefore, our results pave the way towards applications based on graphene transistors in future electronic devices.
