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  • 标题:Itinerant magnetism in doped semiconducting β-FeSi2 and CrSi2
  • 本地全文:下载
  • 作者:David J. Singh ; David Parker
  • 期刊名称:Scientific Reports
  • 电子版ISSN:2045-2322
  • 出版年度:2013
  • 卷号:3
  • DOI:10.1038/srep03517
  • 出版社:Springer Nature
  • 摘要:Novel or unusual magnetism is a subject of considerable interest, particularly in metals and degenerate semiconductors. In such materials the interplay of magnetism, transport and other Fermi liquid properties can lead to fascinating physical behavior. One example is in magnetic semiconductors, where spin polarized currents may be controlled and used. We report density functional calculations predicting magnetism in doped semiconducting β -FeSi2 and CrSi2 at relatively low doping levels particularly for n -type. In this case, there is a rapid cross-over to a half-metallic state as a function of doping level. The results are discussed in relation to the electronic structure and other properties of these compounds.
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