摘要：The pursuit of high internal quantum efficiency (IQE) for green emission spectral regime is referred as “green gap” challenge. Now researchers place their hope on the InGaN-based materials to develop high-brightness green light-emitting diodes. However, IQE drops fast when emission wavelength of InGaN LED increases by changing growth temperature or well thickness. In this paper, a new wavelength-adjusting method is proposed and the optical properties of LED are investigated. By additional process of indium pre-deposition before InGaN well layer growth, the indium distribution along growth direction becomes more uniform, which leads to the increase of average indium content in InGaN well layer and results in a redshift of peak-wavelength. We also find that the IQE of LED with indium pre-deposition increases with the wavelength redshift. Such dependence is opposite to the IQE-wavelength behavior in conventional InGaN LEDs. The relations among the IQE, wavelength and the indium pre-deposition process are discussed.
