摘要：Self-assembled InGaAs quantum dots (QDs) were fabricated inside a planar microcavity with two vertical cavity modes. This allowed us to excite the QDs coupled to one of the vertical cavity modes through two propagating cavity modes to study their down- and up-converted photoluminescence (PL). The up-converted PL increased continuously with the increasing temperature, reaching an intensity level comparable to that of the down-converted PL at ~120 K. This giant efficiency in the up-converted PL of InGaAs QDs was enhanced by about 2 orders of magnitude with respect to a similar structure without cavity. We tentatively explain the enhanced up-converted signal as a direct consequence of the modified spontaneous emission properties of the QDs in the microcavity, combined with the phonon absorption and emission effects.
