摘要：Transparent ultraviolet (UV) ZnO thin film photoconductors are expected to have great applications in environmental monitoring, large-area displays, and optical communications, and they have drawn enormous interests in recent years. However, at present their performances are not satisfactory: the responsivity R (a parameter characterizing the sensitivity of the device to light) is not high ( 3 AW−1), and the transparency T is not high either ( 5 AW−1 and T of over 90% are achieved. High values for detectivity D* and linear dynamic range LDR are also obtained, which are 2.05 × 1015 Jones and 60 dB, respectively. Moreover, such high-performance devices can be fabricated on flexible PET (polyethylene terephthalate) substrates.
