摘要：In order to induce greater light absorption, nano-patterning is often applied to the metal-oxide buffer layer in inverted bulk-heterojunction(BHJ) solar cells. However, current homogeneity was significantly disturbed at the interface, leading to an efficiency that was not fully optimized. In this work, an additional PC61BM layer was inserted between the ZnO ripple and the photoactive layer to enhance the electron extraction. The insertion of additional PC61BM layer provided substantial advantages in the operation of inverted BHJ solar cells; specifically, it enhanced current homogeneity and lowered accumulation and trapping of photogenerated charges at the ZnO interface. Inclusion of the additional PC61BM layer led to effective quenching of electron–hole recombination by a reduction in the number of accumulated charges at the surface of ZnO ripples. This resulted in a 16% increase in the efficiency of inverted BHJ solar cells to 7.7%, compared to solar cells without the additional PC61BM layer.
