摘要：InGaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient light sources capable of replacing incandescent bulbs. However, applications of InGaN LEDs are limited to small devices because their fabrication process involves expensive epitaxial growth of InGaN by metalorganic vapor phase epitaxy on single-crystal wafers. If we can utilize a low-cost epitaxial growth process, such as sputtering on large-area substrates, we can fabricate large-area InGaN light-emitting displays. Here, we report the growth of GaN (0001) and InGaN (0001) films on amorphous SiO2 by pulsed sputtering deposition. We found that using multilayer graphene buffer layers allows the growth of highly c -axis-oriented GaN films even on amorphous substrates. We fabricated red, green, and blue InGaN LEDs and confirmed their successful operation. This successful fabrication of full-color InGaN LEDs on amorphous substrates by sputtering indicates that the technique is quite promising for future large-area light-emitting displays on amorphous substrates.
