标题：CORRIGENDUM: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application
摘要：Scientific Reports 4 , Article number: 4948 10.1038/srep04948 ( 2014 ); Published: 13 May 2014 ; Updated: 03 November 2014 The Acknowledgements section in this Article was omitted. The Acknowledgements should read: “This work was supported by a Korea University Grant.
