摘要：The Ovonic Threshold Switch (OTS) based on an amorphous chalcogenide material has attracted much interest as a promising candidate for a high-performance thin-film switching device enabling 3D-stacking of memory devices. In this work, we studied on the electronic structure of amorphous Sb-doped Ge0.6Se0.4 (in atomic mole fraction) film and its characteristics as to OTS devices. From the optical absorption spectroscopy measurement, the band gap ( E g) was found to decrease with increasing Sb content. In addition, as Sb content increased, the activation energy ( E a) for electrical conduction was found to decrease down to about one third of E g from a half. As to the device characteristics, we found that the threshold switching voltage ( V th) drastically decreased with the Sb content. These results, being accountable in terms of the changes in the bonding configuration of constituent atoms as well as in the electronic structure such as the energy gap and trap states, advance an effective method of compositional adjustment to modulate V th of an OTS device for various applications.
