摘要：Two dimensional transition metal dichalcogenides have very exciting properties for optoelectronic applications. In this work we theoretically investigate and predict that superlattices comprised of MoS2 and WSe2 multilayers possess continuously tunable electronic structure with direct bandgaps. The tunability is controlled by the thickness ratio of MoS2 versus WSe2 of the superlattice. When this ratio goes from 1:2 to 5:1, the dominant K-K direct bandgap is continuously tuned from 0.14 eV to 0.5 eV. The gap stays direct against −0.6% to 2% in-layer strain and up to −4.3% normal-layer compressive strain. The valance and conduction bands are spatially separated. These robust properties suggest that MoS2 and WSe2 multilayer superlattice should be a promising material for infrared optoelectronics.
