摘要：We fabricated perovskite solar cells using a triple-layer of n- type doped, intrinsic, and p -type doped 2,2′,7,7′-tetrakis(N,N′-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD) ( n - i - p ) as hole transport layer (HTL) by vacuum evaporation. The doping concentration for n -type doped spiro-OMeTAD was optimized to adjust the highest occupied molecular orbital of spiro-OMeTAD to match the valence band maximum of perovskite for efficient hole extraction while maintaining a high open circuit voltage. Time-dependent solar cell performance measurements revealed significantly improved air stability for perovskite solar cells with the n - i - p structured spiro-OMeTAD HTL showing sustained efficiencies even after 840 h of air exposure.
