摘要：Progress on the fabrication of ultrahigh- Q photonic-crystal nanocavities (PhC-NCs) has revealed the prospect for new applications including silicon Raman lasers that require a strong confinement of light. Among various PhC-NCs, the highest Q has been recorded with silicon. On the other hand, microcavity is one of the basic building blocks in silicon photonics. However, the fusion between PhC-NCs and silicon photonics has yet to be exploited, since PhC-NCs are usually fabricated with electron-beam lithography and require an air-bridge structure. Here we show that a 2D-PhC-NC fabricated with deep-UV photolithography on a silica-clad silicon-on-insulator (SOI) structure will exhibit a high- Q of 2.2 × 105 with a mode-volume of ~1.7( λ / n )3. This is the highest Q demonstrated with photolithography. We also show that this device exhibits an efficient thermal diffusion and enables high-speed switching. The demonstration of the photolithographic fabrication of high- Q silica-clad PhC-NCs will open possibility for mass-manufacturing and boost the fusion between silicon photonics and CMOS devices.
