期刊名称：International Journal of Reconfigurable Computing
印刷版ISSN：1687-7195
电子版ISSN：1687-7209
出版年度：2015
卷号：2015
DOI：10.1155/2015/749816
出版社：Hindawi Publishing Corporation
摘要：The paper presents a novel 8T SRAM cell with access pass gates replaced with modified PMOS pass transistor logic. In comparison to 6T SRAM cell, the proposed cell achieves 3.5x higher read SNM and 2.4x higher write SNM with 16.6% improved SINM (static current noise margin) distribution at the expense of 7x lower WTI (write trip current) at 0.4 V power supply voltage, while maintaining similar stability in hold mode. The proposed 8T SRAM cell shows improvements in terms of 7.735x narrower spread in average standby power, 2.61x less in average (write access time), and 1.07x less in average (read access time) at supply voltage varying from 0.3 V to 0.5 V as compared to 6T SRAM equivalent at 45 nm technology node. Thus, comparative analysis shows that the proposed design has a significant improvement, thereby achieving high cell stability at 45 nm technology node.
