摘要：Copper Gallium selenide films were deposited for the first time by the brush electrodeposition technique. The films were deposited at different bath temperatures in the range of 30 - 80°C at a constant current density of 3.0 mA cm-2. The films exhibited single phase Copper Gallium selenide. Optical band gap of the film deposited at 80°C was1.68 eV. Room temperature resistivity of the films were in the range of 0.1 - 14.0 ohm cm. Photoconductivity measurements were made at room temperature. Photocurrent Capacitance voltage measurements indicated the films to exhibit p -type behaviour. The flat band potential (Vfb) was 0.60V (SCE) and a carrier density in the range of 2.5 x 1017 cm-3 was obtained. A single Photoluminescence peak was observed at 1.64 eV. Keywords: Chalcopyrite; I-III-VI2; Ssemiconductors; Thin films.
