摘要：The properties of ultraviolet (UV) photodetector fabricated on TiO2/diamond film were investigated. Single crystal diamond layer was grown on high-pressure-high-temperature Ib-type diamond substrate by microwave plasma chemical vapor deposition method, upon which TiO2 film was prepared directly using radio frequency magnetron sputtering technique in Ar and O2 mixing atmosphere. Tungsten was used as electrode material to fabricate metal-semiconductor-metal UV photodetector. The dark current is measured to be 1.12 pA at 30 V. The photo response of the device displays an obvious selectivity between UV and visible light, and the UV-to-visible rejection ratio can reach 2 orders of magnitude. Compared with that directly on diamond film, photodetector on TiO2/diamond film shows higher responsivity.
