摘要：We report the synthesis and characterization of a bulk form diluted magnetic semiconductor Ba(Zn1−2 x Mn x Cu x )2As2 with the crystal structure identical to that of “122” family iron based superconductors and the antiferromagnet BaMn2As2. No ferromagnetic order occurs with (Zn, Mn) or (Zn, Cu) substitution in the parent compound BaZn2As2. Only when Zn is substituted by both Mn and Cu simultaneously, can the system undergo a ferromagnetic transition below T C ~ 70 K, followed by a magnetic glassy transition at T f ~ 35 K. AC susceptibility measurements for Ba(Zn0.75Mn0.125Cu0.125)2As2 reveal that T f strongly depends on the applied frequency with and a DC magnetic field dependence of , demonstrating that a spin glass transition takes place at T f . As large as −53% negative magnetoresistance has been observed in Ba(Zn1−2 x Mn x Cu x )2As2, enabling its possible application in memory devices.
