出版社：Electronics and Telecommunications Research Institute
摘要：A C-band 50 W high-power microwave monolithic integrated circuit amplifier for use in a phased-array radar system was designed and fabricated using commercial AlGaN/GaN technology. This two-stage amplifier can achieve a saturated output power of 50 W with higher than 35% power-added efficiency and 22 dB small-signal gain over a frequency range of 5.5 GHz to 6.2 GHz. With a compact chip area, an output power density of is demonstrated.
关键词：C-band;microwave monolithic integrated circuit;high power amplifier;GaN;saturated output power;power density
