出版社：Electronics and Telecommunications Research Institute
摘要：We investigate the characteristics of thin films deposited through the addition of gas. The addition of gas has remarkable effects on the phase changes, resulting in improved electrical and optical properties. An intermediate phase ( ) appears at a flow rate of 1 sccm, and a (200) phase is then preferentially grown at a higher feeding amount of . The optical and electrical properties of thin films are improved with a sufficient flow rate of more than 15 sccm, as confirmed through various analyses. Under this condition, a high bandgap energy of 2.58 eV and a conductivity of S/cm are obtained. These high-quality thin films are expected to be applied to -based heterojunction solar cells and optical functional films.
关键词：Cuprite;nitrogen;$Cu_2O$;high energy gap;sputter
