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  • 标题:Fabrication of Superjunction Trench Gate Power MOSFETs Using BSG-Doped Deep Trench of p-Pillar
  • 本地全文:下载
  • 作者:Kim, Sang Gi ; Park, Hoon Soo ; Na, Kyoung Il
  • 期刊名称:ETRI Journal
  • 印刷版ISSN:1225-6463
  • 电子版ISSN:2233-7326
  • 出版年度:2013
  • 卷号:35
  • 期号:4
  • 页码:632-637
  • DOI:10.4218/etrij.13.1912.0012
  • 语种:English
  • 出版社:Electronics and Telecommunications Research Institute
  • 摘要:In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p-pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the various boron doping experiments, as well as the process simulations, we optimize the process conditions related with the p-pillar depth, lateral boron doping concentration, and diffusion temperature. Compared with a conventional TGMOSFET, the potential of the SJ TGMOSFET is more uniformly distributed and widely spread in the bulk region of the n-drift layer due to the trenched p-pillar. The measured breakdown voltage of the SJ TGMOSFET is at least 28% more than that of a conventional device.
  • 关键词:Superjunction MOSFET;trench p-pillar formation;trench gate
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