出版社：Electronics and Telecommunications Research Institute
摘要：In this paper, we propose a triple-gate trench power MOSFET (TGRMOS) that is made through a modified RESURF stepped oxide (RSO) process, that is, the nitride_RSO process. The electrical characteristics of TGRMOSs, such as the blocking voltage ( ) and on-state current ( ), are strongly dependent on the gate configuration and its bias condition. In the nitride_RSO process, the thick single insulation layer ( ) of a conventional RSO power MOSFET is changed to a multilayered insulator ( ). The inserted layer can create the selective etching of the TEOS layer between the gate oxide and poly-Si layers. After additional oxidation and the poly-Si filling processes, the gates are automatically separated into three parts. Moreover, to confirm the variation in the electrical properties of TGRMOSs, such as and , simulation studies are performed on the function of the gate configurations and their bias conditions. and are controlled from 87 V to 152 V and from 0.14 mA to 0.24 mA at a 15-V gate voltage. This variation indicates the specific on-resistance modulation.
