出版社：Electronics and Telecommunications Research Institute
摘要：A Ka-band 6-W high power microwave monolithic integrated circuit amplifier for use in a very small aperture terminal system requiring high linearity is designed and fabricated using commercial 0.15- GaAs pHEMT technology. This three-stage amplifier, with a chip size of 22.1 can achieve a saturated output power of 6 W with a 21% power-added efficiency and 15-dB small signal gain over a frequency range of 28.5 GHz to 30.5 GHz. To obtain high linearity, the amplifier employs a class-A bias and demonstrates an output third-order intercept point of greater than 43.5 dBm over the above-mentioned frequency range.
关键词：Ka-band;microwave monolithic integrated circuit (MMIC);high power amplifier (HPA);linearity;output third-order intercept point (OIP3);very small aperture terminal (VSAT)
