出版社：Electronics and Telecommunications Research Institute
摘要：Three-dimensional (3D) memories using through-silicon vias (TSVs) as vertical buses across memory layers will likely be the first commercial application of 3D integrated circuit technology. The memory dies to stack together in a 3D memory are selected by a die-selection method. The conventional die-selection methods do not result in a high-enough yields of 3D memories because 3D memories are typically composed of known-good-dies (KGDs), which are repaired using self-contained redundancies. In 3D memory, redundancy sharing between neighboring vertical memory dies using TSVs is an effective strategy for yield enhancement. With the redundancy sharing strategy, a known-bad-die (KBD) possibly becomes a KGD after bonding. In this paper, we propose a novel die-selection method using KBDs as well as KGDs for yield enhancement in 3D memory. The proposed die-selection method uses three search-space conditions, which can reduce the search space for selecting memory dies to manufacture 3D memories. Simulation results show that the proposed die-selection method can significantly improve the yield of 3D memories in various fault distributions.
