出版社：Electronics and Telecommunications Research Institute
摘要：A millimeter-wave (mm-wave) high-linear low-noise amplifier (LNA) is presented using a 0.18 standard CMOS process. To improve the linearity of mm-wave LNAs, we adopted the multiple-gate transistor (MGTR) topology used in the low frequency range. By using an MGTR having a different gate-source bias at the last stage of LNAs, third-order input intercept point (IIP3) and 1-dB gain compression point ( ) increase by 4.85 dBm and 4 dBm, respectively, without noise figure (NF) degradation. At 33 GHz, the proposed LNAs represent 9.5 dB gain, 7.13 dB NF, and 6.25 dBm IIP3.
