出版社：Electronics and Telecommunications Research Institute
摘要：The primary dose effects on an insulated gate bipolar transistor (IGBT) irradiated with a gamma-ray source are found in both of the components of the threshold shifting due to oxide charge trapping in the MOS and the reduction of current gain in the bipolar transistor. In this letter, the IGBT macro-model incorporating irradiation is implemented, and the electrical characteristics are analyzed by SPICE simulation and experiments. In addition, the collector current characteristics as a function of gate emitter voltage, VGE, are compared with the model considering the radiation damage of different doses under positive biases.
