出版社：Electronics and Telecommunications Research Institute
摘要：We report on the bias stability characteristics of transparent ZnO thin film transistors (TFTs) under visible light illumination. The transfer curve shows virtually no change under positive gate bias stress with light illumination, while it shows dramatic negative shifts under negative gate bias stress. The major mechanism of the bias stability under visible illumination of our ZnO TFTs is thought to be the charge trapping of photo-generated holes at the gate insulator and/or insulator/channel interface.
关键词：ZnO;transparent oxide semiconductor;thin film transistor (TFT);bias stability;light effect
