出版社：Electronics and Telecommunications Research Institute
摘要：The etching mechanism of thin films and etch selectivity over some materials in both /Ar and /Ar plasmas are investigated using a combination of experimental and modeling methods. To obtain the data on plasma composition and fluxes of active species, global (0-dimensional) plasma models are developed with Langmuir probe diagnostics data. In /Ar plasma, changes in gas mixing ratio result in non-linear changes of both densities and fluxes for Cl, , and . In this work, it is shown that the non-monotonic behavior of the etch rate as a function of the /Ar mixing ratio could be related to the ion-assisted etch mechanism and the ion-flux-limited etch regime. The addition of up to 33% to the -rich Ar plasma does not influence the etch rate, but it non-monotonically changes the etch rates of both Si and . The last effect can probably be associated with the corresponding behavior of the F atom density.
关键词：$ZrO_2$;etch rate;dissociation;ionization;etch mechanism;$BCl_3$/Ar and $BCl_3/CHF_3$/Ar plasma modeling
