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  • 标题:Radiation Effects of Proton Particles in Memory Devices
  • 本地全文:下载
  • 作者:Lho, Young-Hwan ; Kim, Ki-Yup
  • 期刊名称:ETRI Journal
  • 印刷版ISSN:1225-6463
  • 电子版ISSN:2233-7326
  • 出版年度:2007
  • 卷号:29
  • 期号:1
  • 页码:124-126
  • 语种:English
  • 出版社:Electronics and Telecommunications Research Institute
  • 摘要:In this letter, we study the impact of single event upsets (SEUs) in space or defense electronic systems which use memory devices such as EEPROM, and SRAM. We built a microcontroller test board to measure the effects of protons on electronic devices at various radiation levels. We tested radiation hardening at beam current, and energy levels, measured the phenomenon of SEUs, and addressed possible reasons for SEUs.
  • 关键词:Radiation effect;single event upset;single event effect;memory device;proton
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