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  • 标题:Novel Low-Power High-dB Range CMOS Pseudo-Exponential Cells
  • 本地全文:下载
  • 作者:De La Cruz Blas, Carlos A. ; Lopez-Martin, Antonio
  • 期刊名称:ETRI Journal
  • 印刷版ISSN:1225-6463
  • 电子版ISSN:2233-7326
  • 出版年度:2006
  • 卷号:28
  • 期号:6
  • 页码:732-738
  • 语种:English
  • 出版社:Electronics and Telecommunications Research Institute
  • 摘要:In this paper, novel CMOS pseudo-exponential circuits operating in a class-AB mode are presented. The pseudo-exponential approximation employed is based on second order equations. Such terms are derived in a straightforward way from the inherent nonlinear currents of class-AB transconductors. The cells are appropriate to be integrated in portable equipment due to their compactness and very low power consumption. Measurement results from a fabricated prototype in a 0.5 technology reveal a range of 45 dB with errors lower than dB, a power consumption of 100 , and an area of 0.01 .
  • 关键词:VGA;pseudo-exponential circuits;low-voltage
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