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  • 标题:Temperature, Current, and Voltage Dependences of Junction Failure in PIN Photodiodes
  • 本地全文:下载
  • 作者:Park, Sahng-Gi ; Sim, Eun-Deok ; Park, Jeong-Woo
  • 期刊名称:ETRI Journal
  • 印刷版ISSN:1225-6463
  • 电子版ISSN:2233-7326
  • 出版年度:2006
  • 卷号:28
  • 期号:5
  • 页码:555-560
  • 语种:English
  • 出版社:Electronics and Telecommunications Research Institute
  • 摘要:A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 95.3% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of , it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes.
  • 关键词:Photodiodes;detectors;reliability;junction failure;dark current
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