出版社：Electronics and Telecommunications Research Institute
摘要：We have carried out the fabrications of a barrier layer on a polyethersulfon (PES) film and organic light emitting diode (OLED) based on a plastic substrate by means of atomic layer deposition (ALD). Simultaneous deposition of 30 nm film on both sides of the PES film gave a water vapor transition rate (WVTR) of . Further, the double layer of 200 nm film deposited by plasma enhanced chemical vapor deposition (PECVD) and 20 nm film by ALD resulted in a WVTR value lower than the detection limit of MOCON. We have investigated the OLED encapsulation performance of the double layer using the OLED structure of ITO / MTDATA (20 nm) / NPD (40 nm) / AlQ (60 nm) / LiF (1 nm) / Al (75 nm) on a plastic substrate. The preliminary life time to reach 91% of the initial luminance was 260 hours for the OLED encapsulated with 100 nm of PECVD-deposited and 30 nm of ALD-deposited .
关键词：OLED;thin film passivation;atomic layer deposition (ALD)
