出版社：Electronics and Telecommunications Research Institute
摘要：We present a new type of silicon micro-probe card using a three-dimensional probe beam of the cantilever type. It was fabricated using KOH and dry etching, a porous silicon micromachining technique, and an Au electroplating process. The cantilever-type probe beam had a thickness of , and a width of and a length of . The probe beam for pad contact was formed by the thermal expansion coefficient difference between the films. The maximum height of the curled probe beam was , and an annealing process was performed for 20 min at . The contact resistance of the newly fabricated probe card was less than , and its lifetime was more than 20,000 turns.
