出版社：Electronics and Telecommunications Research Institute
摘要：Silicon dioxide ( ) films prepared by plasma-enhanced atomic-layer deposition were successfully grown at temperatures of , showing self-limiting characteristics. The growth rate decreases with an increasing deposition temperature. The relative dielectric constants of films are ranged from 4.5 to 7.7 with the decrease of growth temperature. A film grown at exhibits a much lower leakage current than that grown at due to its high film density and the fact that it contains deeper electron traps.
