出版社：Electronics and Telecommunications Research Institute
摘要：To improve the characteristics of breakdown voltage and specific on-resistance, we propose a new structure for a LDMOSFET for a PDP scan driver IC based on silicon-on-insulator with a trench under the gate in the drift region. The trench reduces the electric field at the silicon surface under the gate edge in the drift region when the concentration of the drift region is high, and thereby increases the breakdown voltage and reduces the specific on-resistance. The breakdown voltage and the specific on-resistance of the fabricated device is 352 V and with a threshold voltage of 1.0 V. The breakdown voltage of the device in the on-state is over 200 V and the saturation current at and =20V is 16 mA with a gate width of .
