出版社：Electronics and Telecommunications Research Institute
摘要：This paper reports on our investigation of DC and RF characteristics of p-channel metal oxide semiconductor field effect transistors (pMOSFETs) with a compressively strained channel. Because of enhanced hole mobility in the buried layer, the pMOSFET showed improved DC and RF characteristics. We demonstrate that the 1/f noise in the pMOSFET was much lower than that in the all-Si counterpart, regardless of gate-oxide degradation by electrical stress. These results suggest that the pMOSFET is suitable for RF applications that require high speed and low 1/f noise.
