首页    期刊浏览 2024年11月09日 星期六
登录注册

文章基本信息

  • 标题:A Study on Modified Silicon Surface after $CHF_3/C_2F_6$ Reactive Ion Etching
  • 本地全文:下载
  • 作者:Park, Hyung-Ho ; Kwon, Kwang-Ho ; Lee, Sang-Hwan
  • 期刊名称:ETRI Journal
  • 印刷版ISSN:1225-6463
  • 电子版ISSN:2233-7326
  • 出版年度:1994
  • 卷号:16
  • 期号:1
  • 页码:45-45
  • 语种:English
  • 出版社:Electronics and Telecommunications Research Institute
  • 摘要:The effects of reactive ion etching (RIE) of layer in on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE : (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, , , , and plasma treatments. XPS analysis revealed that treatment is most effective. With 10 seconds exposure to plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.
国家哲学社会科学文献中心版权所有