出版社：Electronics and Telecommunications Research Institute
摘要：has a very wide range of applications in optoelectronic devices especially for optical communications because has the bandgap of the lowest dispersion ( ) and the lowest loss ( ) of the optical fiber by changing the composition. The quality of epitaxial layer is believed to have a significant effect on the performance of device. The OMVPE growth conditions for the latticematched /InP were investigated. Effects of growth conditions such as V/III ratio, growth temperature, and Ga source material on the electrical and optical properties were studied. The composition, electrical and optical properities of were characterized using double crystal X-ray diffractometer (DCD), photoluminescence (PL), XPS(ESCA) and Hall measurement.
