出版社：Electronics and Telecommunications Research Institute
摘要：Schottky contacts of sputter-deposited tungsten film on Si-doped (100) GaAs have been interpreted by material parameters such as phase transformation of W- W, interdiffusion behavior of W, Ga, and As, and defect recovery kinetics by using AES, SEM,X-ray diffractometer, 4-point probe and I-V measurement. Diffusion depth at W/ GaAs interface during two stage activationannealing was decreased in comparison with the normal activation annealing, which causes the increase of barrier height at W/GaAs interface. The first rules of temperaturedependence of interdiffusivities of Ga, As, andW are as follows ; , exp(-3.77(eV. )/kT) exp(- 3.45(eV. /kT) exp (-3.09(eV. )/kT) The resistivity change of W film has been related to the defect concentration, impurity concentration, and phase composition ( Wand W). The oxygen atoms contaminated to W films during the deposition have a substential effect on the nucleation of W. The resistivity of W film is changed from to in the temperature range of to , which indicates the annihilation of sputtering induced imperfections during the annealing. The W W transformation occurs between and , corresponding to the resistivity change from to
