期刊名称：International Journal of Soft Computing & Engineering
电子版ISSN：2231-2307
出版年度：2014
卷号：4
期号：1
页码：145-149
出版社：International Journal of Soft Computing & Engineering
摘要：The microwave as well as the small signal noise properties on a one dimensional n+npp+ DDR structure 4H-SiC IMPATT Diode have been studied using advanced computer simulation program developed by us and compared at different frequency of Ka band by taking the area of the diode as 8 2 10 m . Also the theory for the diode current noise associated with the electron hole pair generation and recombination in the space charge region of the diode is presented. This paper can help to know about the small signal behavior as well as noise behavior of IMPATT diode along with power density at the Ka band and will be helpful for designing the 4H-SiC based IMPATT diode depending upon the microwave applications.
关键词：Impact ionization; efficiency; mean square noise;voltage; quality factor; noise spectral density; power density; noise;measure.
