标题：Effects of SiO2 and TiO2 Nano Fillers in Enhancing the Insulation Breakdown Strength of Epoxy Nano Composite Dielectric under Divergent Electric Field
期刊名称：International Journal on Electrical Engineering and Informatics
印刷版ISSN：2085-6830
出版年度：2013
卷号：5
期号：4
DOI：10.15676/ijeei.2013.5.4.9
出版社：School of Electrical Engineering and Informatics
摘要：The proper mixing of nanoscale fillers in conventional dielectric materialsleads to an enhancement in the breakdown strength and voltage endurance. In this studyexperimental investigations are carried out to compare the breakdown characteristics ofepoxy nano-composites with that of a base epoxy resin under the influence of divergentelectric fields so as to obtain inferences on its breakdown performances. This would inturn enable providing solutions to acquire more effective electrical insulation systemsand explore the prospect of tapping the merits of utilizing the rapid strides made in fieldof fabrication of nano-dielectrics. The main objective is such studies are to enhance theelectrical properties of the epoxy dielectric by employing nano-fillers such as SiO2,TiO2 etc. This research envisages the use of epoxy resin mixed with nano-fillers forascertaining the ability of the nano-composite to be utilized as a dielectric/ insulator inpower apparatus. The epoxy resin is mixed with appropriate proportion of SiO2 andTiO2 and experimentation is carried out under the influence of divergent electric fields.Classical breakdown voltage withstand tests such as AC power frequency, DC voltage,lightning impulse and switching impulse test is carried out on epoxy dielectrics (withand without nano-fillers) and the results are compared. In addition, a non-classicalbreakdown voltage test (high frequency high voltage) is also devised to analyze andascertain the breakdown characteristics due to varying frequencies so as to investigatethe possibility of utilizing such nano-composites in applications related to high speedswitching devices.
关键词：Epoxy resin; nano-fillers; Divergent electric fields
