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  • 标题:Offset Reduction of CMOS Based Dynamic Comparator by using Charge Storage Techniques - A Comparative Study
  • 本地全文:下载
  • 作者:NEERAV MEHAN ; ANSHUL KUMAR ; KAMNA KOHLI
  • 期刊名称:International Journal of Innovative Research in Computer and Communication Engineering
  • 印刷版ISSN:2320-9798
  • 电子版ISSN:2320-9801
  • 出版年度:2013
  • 卷号:1
  • 期号:4
  • 出版社:S&S Publications
  • 摘要:Comparator is one of the most widely used building block for analog and mixed signal systems. For theimplementation of high-performance CMOS A/D converters, low offset comparators are essential. In this paper, dynamiccomparator offset is calculated to the extent of high accuracy. The offset so calculated has been reduced by the chargestorage techniques to achieve an efficient design. In addition to the offset, propagation delay and power dissipation, beingthe important parameter of the comparator, has been analyzed. It is observed that offset voltage in the comparator has beenreduced to 350μV for output offset storage technique and 400μV for input offset storage techniques from 91mV. In thispaper, BPTM model has been used in analyze the dynamic comparator.
  • 关键词:Dynamic comparator; offset voltage; storage capacitor; input offset storage; output offset storage
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