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  • 标题:Impact of Tantalum Capacitor on Performance of Low Drop-out Voltage Regulator
  • 本地全文:下载
  • 作者:Megha Goyal ; Dimple Saproo
  • 期刊名称:International Journal of Innovative Research in Computer and Communication Engineering
  • 印刷版ISSN:2320-9798
  • 电子版ISSN:2320-9801
  • 出版年度:2013
  • 卷号:1
  • 期号:9
  • 出版社:S&S Publications
  • 摘要:The motivation behind the paper of Low Drop-Out (LDO) regulators is driven by the growing demand forhigher performance power supply circuits.Power management has had an ever increasing role in the present electronicindustry. Battery powered and handheld applications require power management techniques to extend the life of thebattery and consequently the operation life of the device. Most systems incorporate several voltage regulators whichsupply various subsystems and provide isolation among such subsystems. Low dropout (LDO) voltage regulators aregenerally used to supply low voltage, low noise analog circuitry. Each LDO regulator demands a large externalcapacitor to improve supply noise rejection and transient response, in the range of a few microfarads, to perform. ACMOS LDO voltage regulator which is stable with high ESR tantalum output capacitor is studied in this paper.
  • 关键词:Low Drop-Out; Tantalum; Electro-Static Resistance
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