期刊名称：International Journal of Innovative Research in Computer and Communication Engineering
印刷版ISSN：2320-9798
电子版ISSN：2320-9801
出版年度：2014
卷号：2
期号：1
出版社：S&S Publications
摘要：In this paper, two different structural layouts of resonant tunnelling diodes (RTD) are simulated to study the effect of their different output parameters. Both the structures exhibit double barriers and the material used is Gallium Arsenide (GaAs). The output results are evaluated and the effect of their conduction band, VI characteristics, resonant energy and transmission coefficients is studied. The performance of these structures makes use of the quantum mechanical tunnelling. Both the designs of double barrier RTD's shows so me interesting results in almost every aspect of the evaluated parameters
