期刊名称：International Journal of Electronics Communication and Computer Engineering
印刷版ISSN：2249-071X
电子版ISSN：2278-4209
出版年度：2013
卷号：4
期号：2
页码：512-517
出版社：IJECCE
摘要：Normally off microwave devices like MOSFET are popular due to its high package density, dynamic operating range, low power consumption and sensitivity to light. In this paper, modelling of optical interaction in MOSFET is reported. Sensitivity of S parameters to the light is investigated theoretically at microwave frequency of 1-2GHz i.e. for L band. Noise Figure is lowest in this band when computed in 1 to 10 GHz frequency range. Stability and power gain of the device depends on forward transmission coefficient, S21. Transconductance of the device increases due to optical effect which in turn increases S21. Analysis shows that there is significant optical effect on the stability and various power gains of MOSFET. It is seen that device can be conditionally stable in L band and power gain of the device increases due to optical interaction. Results are computed numerically in MATLAB (7.10 version).
关键词：Microwave; Modelling; MOSFET; Noise Figure; Optical; Stability; Power Gain
