期刊名称：International Journal of Engineering and Computer Science
印刷版ISSN：2319-7242
出版年度：2013
卷号：2
期号：12
页码：3580-3583
出版社：IJECS
摘要：All kinds of tunneling diodes make use of the quantum mechanical tunneling. A resonant-tunneling diode (RTD) is a diode witha resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. In this research article,analytic model of resonant tunnelling diode (RTD) is simulated for two different structures, i.e. single barrier (1B) RTD and double barrier(2B) RTD. Different parameters such as conduction band, VI characteristics, resonant energy and transmission coefficients are studied toevaluate the performance of these structures. Double barrier RTD shows improved results in comparison to the single barrier RTD bykeeping other parameters constants in absence of electric field
关键词：RTD; transmission coefficient; resonance; conduction band
