首页    期刊浏览 2025年06月13日 星期五
登录注册

文章基本信息

  • 标题:Efficient Storage of Defect Maps for Nanoscale Memory
  • 本地全文:下载
  • 作者:Md. Masud Parvez
  • 期刊名称:International Journal of Engineering and Computer Science
  • 印刷版ISSN:2319-7242
  • 出版年度:2015
  • 卷号:4
  • 期号:12
  • 页码:15328-15333
  • 出版社:IJECS
  • 摘要:Nanoscale technology promises dramatic increases in device density, but reliability is decreased as a side-effect. With bit-error ratesprojected to be as high as 10%, designing a usable nanoscale memory system poses a significant challenge. Storing defect informationcorresponding to every bit in the nanoscale device using a reliable storage bit is prohibitively costly. Using a Bloom filter to store a defectmap provides better compression at the cost of a small false positive rate (us-able memory mapped as defective). Using a list-based techniquefor storing defect maps performs well for cor-related errors, but poorly for randomly distributed de-fects. In this paper, we propose analgorithm for parti-tioning correlated defects from random ones. The mo-tivation is to store the correlated defects using rectan-gular rangesin a ternary content-addressable memory (TCAM) and random defects using a Bloom filter. We believe that a combination of Bloom filterand small size TCAM is more effective for storing defect map at high error rate. We show the results for different correlated distributions
国家哲学社会科学文献中心版权所有