摘要：We study spectral singularities and critical field enhancement factors associated with embedded photonic bound states in subwavelength periodic Si films. Ultrahigh-Q resonances supporting field enhancement factor exceeding 108 are obtained in the spectral vicinity of exact embedded eigenvalues in spite of deep surface modulation and vertical asymmetry of the given structure. Treating relations between the partial resonance Q and field enhancement factors with an analytical coupled-mode model, we derive a general strategy to maximize the field enhancement associated with these photonic bound states in the presence of material dissipation. The analytical expression for the field enhancement quantitatively agrees with rigorous numerical calculations. Therefore, our results provide a general knowledge for designing practical resonance elements based on optical bound states in the continuum in various applications.
