期刊名称:International Journal of Innovative Research in Computer and Communication Engineering
印刷版ISSN:2320-9798
电子版ISSN:2320-9801
出版年度:2015
卷号:3
期号:3
DOI:10.15680/ijircce.2015.0303140
出版社:S&S Publications
摘要:We investigate the mechanism of threshold voltage shifting of SRAM based on floating gates. Multithreshold SRAM based on floating gates is represented in this paper to reduce the power consumption and leakagecurrent. By using multi threshold technique in SRAM based on floating gates, it consumes 66.39% less power forwrite'1' operation, 56.21% less power for write'0' operation, 23.35% less power for read'1' operation and 34.66% lesspower for read'0' operation as compared to SRAM using floating gates. It also consumes 90% less leakage current inhold state as compared to SRAM using floating gates in 180nM technology. For minimizing power consumption andleakage current, the concept of multi threshold is included in this paper
关键词:Floating gate; Multi Vth; Transistor Stacking; SRAM