期刊名称：Facta universitatis - series: Electronics and Energetics
印刷版ISSN：0353-3670
电子版ISSN：2217-5997
出版年度：2016
卷号：29
期号：1
页码：1-10
DOI：10.2298/FUEE1601001L
出版社：University of Niš
摘要：One of the critical requirements for high power devices is to have rugged and reliable capability against hash operating conditions. In this paper, we present the dynamic voltage clamping capability of 3.3kV Field Stop Clustered IGBT devices under extreme inductive load condition. It shows that PMOS trench gate CIGBT structure with outstanding performance of fast turn-off time and low over-shoot voltage. Further optimization of current gain of CIGBT structure is analyzed through numerical evaluation. A step further in the safe operating area has been achieved for high voltage devices by CIGBT technology.
关键词：Insulated Gate Bipolar Transistor (IGBT); power semiconductor devices; Clustered IGBT
